sst4401 / mmst4401 transistors rev.b 1/3 npn medium power transistor (switching) sst4401 / mmst4401 z features 1) bv ceo > 40v (i c =1ma) 2) complements the sst4403 / mmst4403. z package, marking, and packaging specifications part no. packaging type marking code basic ordering unit (pieces) sst4401 sst3 r2x t116 3000 mmst4401 smt3 r2x t146 3000 z absolute maximum ratings (ta=25 c) parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature symbol v cbo v ceo v ebo i c tj tstg limits 60 40 6 0.6 150 ? 55 to +150 unit v v v a collector power dissipation p c 0.2 0.35 w w ?c ?c ? mounted on a 7 5 0.6mm ceramic substrate + + z dimensions (unit : mm) sst4401 mmst4401 rohm : sst3 (1) emitter (2) base (3) collector rohm : smt3 eiaj : sc-59 (1) emitter (2) base (3) collector z electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current bv cbo bv ceo bv ebo i cbo i ebo 60 40 6 ? ? ? ? ? ? ? ? ? ? 0.1 0.1 v v v a a i c = 100a i c = 1ma i e = 100a v cb = 35v v eb = 5v ?? 1.2 base-emitter saturation voltage v be(sat) ?? 0.95 v ?? 0.75 i c /i b = 500ma/50ma collector-emitter saturation voltage v ce(sat) ?? 0.4 v i c /i b = 150ma/15ma i c /i b = 500ma/50ma i c /i b = 150ma/15ma 40 ?? 100 ? 300 dc current transfer ratio h fe 80 ?? ? 40 ?? 20 ?? v ce = 1v, i c = 0.1ma v ce = 1v, i c = 1ma v ce = 1v, i c = 10ma v ce = 1v, i c = 150ma v ce = 2v, i c = 500ma transition frequency collector output capacitance f t cob 250 ? ? ? ? 6.5 mhz pf v ce = 10v, i e = ? 20ma, f = 100mhz v cb = 10v, f = 100khz emitter input capacitance cib ?? 30 pf v eb = 0.5v, f = 100khz delay time td ?? 15 ns v cc = 30v, v eb(off) = 2v, i c = 150ma, i b1 = 15ma v cc = 30v, v eb(off) = 2v, i c = 150ma, i b1 = 15ma rise time tr ?? 20 ns storage time tstg ?? 225 ns v cc = 30v, i c = 150ma, i b1 =- i b2 = 15ma v cc = 30v, i c = 150ma, i b1 =- i b2 = 15ma fall time tf ?? 30 ns
sst4401 / mmst4401 transistors rev.b 2/3 z electrical characteristic curves 0 50 100 10 0 5 i b =0a 100 200 400 500 600 300 ta=25c collector current : ic (ma) collector-emitter voltage : v ce (v) fig.1 grounded emitter output characteristics 0.1 10 1.0 100 1000 100 1000 10 dc current gain : h fe ta =25c v ce = 10v 1v collector current : ic(ma) fig.3 dc current gain vs. collector current() 1.0 10 100 1000 0.2 0.3 0.1 0 collector emitter saturation voltage : v ce(sat) (v) ta=25c i c / i b =10 collector current : ic(ma) fig.2 collector-emitter saturation voltage vs. collector current 0.1 10 1.0 100 1000 100 1000 10 dc current gain : h fe ta =125c v ce = 10 v 25 c ?55 c collector current : ic( ma) fig.4 dc current gain vs. collector current(?) 0.1 10 1.0 100 1000 100 1000 10 ac current gain : h fe ta =25c v ce = 10 v f = 1khz collector current : ic( ma) fig.5 ac current gain vs. collector current 1.0 10 100 1000 0.8 1.2 1.8 1.6 0.4 0 base emitter saturation voltage : v be(sat) (v) ta =25c i c / i b = 10 collector current : ic (ma) fig.6 base-emitter saturation voltage vs. collector current
sst4401 / mmst4401 transistors rev.b 3/3 1 10 100 1000 0.8 1.2 1.8 1.6 0.4 0 base emitter voltage : v be(on) (v) ta =25c v ce = 10v collector current : ic(ma) fig.7 grounded emitter propagation characteristics 1.0 10 100 1000 100 1000 10 turn on time : ton (ns) ta =25c i c / i b = 10 v cc = 30v 10 v collector current : ic(ma) fig.8 turn-on time vs. collector current 1.0 10 100 1000 100 500 5 10 rise time : tr (ns) ta =25c v cc = 30v i c / i b = 10 collector current : ic (ma) fig.9 rise time vs. collector current 1.0 10 100 1000 100 1000 10 storage time : ts (ns) ta =25c v cc = 30v i c = 10i b1 = 10i b2 collector current : ic (ma) fig.10 storage time vs. collector current 1.0 10 100 1000 100 1000 10 fall time : tf(ns) ta =25c v cc = 30v i c = 10i b1 = 10i b2 collector current : ic (ma) fig.11 fall time vs. collector current 0.1 1.0 10 100 10 100 1 capacitance (pf) ta =25c f = 1mhz cib cob reverse bias voltage (v) fig.12 input / output capacitance vs. voltage 1 10 100 1000 10 1 100 0.1 collector-emitter voltage : v ce (v) ta =25c 100mhz 200mhz 250mhz 300mhz 250mhz collector current : ic (ma) fig.13 gain bandwidth product 1.0 10 100 1000 100 1000 10 current gain-bandwidth product (mhz) ta =25c v ce = 10v collector current : ic (ma) fig.14 gain bandwidth product vs. collector current
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / eupope / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2007 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21, saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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